Fabrication and Electrical Characteristics of Metal-Ferroelectric-Semiconductor Field Effect Transistor Based on Poly(vinylidene fluoride)

We fabricated the metal-ferroelectric-semiconductor field effect transistor (MFSFET) using poly(vinylidene fluoride) (PVDF) thin film as a ferroelectric layer. PVDF thin films were prepared by spin-coating PVDF solutions of 2-6 wt % on Si(100) wafers with source and drain diffusion regions. The drain current-gate voltage (I-D-V-G) characteristics of MFSFET exhibited ferroelectric hysteretic curves inducing a counterclockwise loop similar to that of other ferroelectric materials. It seems that the deposited PVDF films were crystallizaed with the ferroelectric beta phase. The memory window widths of the MFSFET were more than 1.0 V. The drain current-drain voltage (I-D-V-D) characteristics show that the MFSFET operates with the PVDF thin film used as a gate dielectric material. The MFSFET using PVDF as ferroelectric layer has promising potential for use in low-voltage operable one-transistor (IT)-type ferroelectric random access memories (FeRAMs) using organic material. [DOI: 10.1143/JJAP.47.8472]