The effect of strain on the miscibility gap in Ga-In-Sb ternary alloy

被引：12

作者：

Lin, C ^{[1
]}

Li, AZ ^{[1
]}

机构：

[1] Chinese Acad Sci, Shanghai Inst Met, State Key Funct Mat Informat, Shanghai 200050, Peoples R China

来源：

JOURNAL OF CRYSTAL GROWTH | 1999年 / 203卷 / 04期

关键词：

miscibility; free energy; residual strain;

D O I：

10.1016/S0022-0248(99)00139-6

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

The range of miscibility is calculated in the frame of delta lattice parameter (DLP) model by taking into account the effects of strain and relaxation. The numerical results show that decreasing the epilayer thickness causes the range of miscibility to become narrower and finally to disappear as the epilayer thickness decreases. The results of thick epilayers are in agreement with models which do not include strain energy. (C) 1999 Published by Elsevier Science B.V. All rights reserved.

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收藏

页码：511 / 515

页数：5

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