High-quality InAlAs layers grown on (411)A-oriented InP substrates by molecular beam epitaxy

被引：3

作者：

Kitada, T ^{[1
]}

Nii, K ^{[1
]}

Hiraoka, T ^{[1
]}

Shimomura, S ^{[1
]}

Hiyamizu, S ^{[1
]}

机构：

[1] Osaka Univ, Grad Sch Engn Sci, Osaka 5608531, Japan

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1999年 / 17卷 / 04期

关键词：

D O I：

10.1116/1.590778

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

High-quality InAlAs layers lattice matched to InP were successfully grown on (411)A-oriented InP substrates by molecular beam epitaxy (MBE). High-resolution x-ray diffraction and photoluminescence (PL) measurements of InAlAs layers grown on (411)A InP substrates revealed that crystalline quality of the (411)A InAlAs layer strongly depends on the substrate temperature (T-s), and much improved crystalline quality of (411)A InAlAs layer was achieved at a high T-s (570 degrees C). The linewidth of the PL (12 K) peak from the best (411)A InAlAs layer is 10.7 meV which is 16%-29% smaller than those (12.8-15 meV) of InAlAs layers grown on conventional (100)InP substrates by MBE. (C) 1999 American Vacuum Society. [S0734-211X(99)01204-4].

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页码：1482 / 1484

页数：3

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