Tunable graphene single electron transistor

被引:328
作者
Stampfer, C. [1 ]
Schurtenberger, E. [1 ]
Molitor, F. [1 ]
Guettinger, J. [1 ]
Ihn, T. [1 ]
Ensslin, K. [1 ]
机构
[1] ETH, Solid State Phys Lab, CH-8093 Zurich, Switzerland
基金
瑞士国家科学基金会;
关键词
D O I
10.1021/nl801225h
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
We report electronic transport experiments on a graphene single electron transistor. The device consists of a graphene island connected to source and drain electrodes via two narrow graphene constrictions. It is electrostatically tunable by three lateral graphene gates and an additional back gate. The tunneling coupling is a strongly nonmonotonic function of gate voltage indicating the presence of localized states in the barriers. We investigate energy scales for the tunneling gap, the resonances in the constrictions, and for the Coulomb blockade resonances. From Coulomb diamond measurements in different device configurations (i.e., barrier configurations) we extract a charging energy of approximate to 3.4 meV and estimate a characteristic energy scale for the constriction resonances of approximate to 10.meV.
引用
收藏
页码:2378 / 2383
页数:6
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