Novel transient phenomena in heterojunction bipolar transistors

被引：4

作者：

Posse, VA

Jalali, B

机构：

[1] Electrical Engineering Department, Univ. of California, Los Angeles, Los Angeles, CA 90095

来源：

SOLID-STATE ELECTRONICS | 1997年 / 41卷 / 04期

关键词：

D O I：

10.1016/S0038-1101(96)00145-1

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The interaction between transferred-electron effect and base widening under transient conditions in III-V heterojunction bipolar transistors is considered. Modification of the collector field profile with an n(+) doping spike is shown to cause a time delay for the onset of Kirk effect creating conditions for the inception of charge instabilities. Numerical simulations suggest the possibility of sustainable intrinsic current oscillations in properly engineered bipolar transistor structures. (C) 1997 Elsevier Science Ltd.

引用

页码：527 / 530

页数：4

共 11 条

[1] ANALYSIS OF WIDEBAND TRANSFERRED ELECTRON DEVICES [J].