TRANSFERRED-ELECTRON INDUCED CURRENT INSTABILITIES IN HETEROJUNCTION BIPOLAR-TRANSISTORS

被引：6

作者：

POSSE, VA ^{[1
]}

JALALI, B ^{[1
]}

LEVI, AFJ ^{[1
]}

机构：

[1] UNIV SO CALIF,DEPT ELECT ENGN ELECTROPHYS,LOS ANGELES,CA 90089

来源：

APPLIED PHYSICS LETTERS | 1995年 / 66卷 / 24期

关键词：

D O I：

10.1063/1.113743

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Current driven instabilities in the collector of III-V heterojunction bipolar transistors (HBT) are investigated. Numerical simulations indicate that in a modified AlGaAs/GaAs HBT the collector current shows oscillatory behavior due to the transferred-electron (Gunn-Hilsum) effect. Influence of the Kirk effect as well as conditions for oscillation are discussed.© 1995 American Institute of Physics.

引用

页码：3319 / 3321

页数：3

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