Determination of interdiffusion coefficients of cations and anions in InGaAs/InP superlattice

被引：22

作者：

Ryu, SW ^{[1
]}

Choe, BD ^{[1
]}

Jeong, WG ^{[1
]}

机构：

[1] SUNGKYUNKWAN UNIV, DEPT MAT ENGN, SUWON, SOUTH KOREA

来源：

APPLIED PHYSICS LETTERS | 1997年 / 71卷 / 12期

关键词：

D O I：

10.1063/1.119790

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The interdiffusion coefficients of cations and anions in InCaAs/InP superlattices (SLs) on their respective sublattices were analyzed quantitatively. Double crystal X-ray diffraction and simulation of the rocking curves based on dynamical diffraction theory were used to measure the interface strain that develops during rapid thermal annealing. Low temperature photoluminescence (PL) measurements were also done to assess the interdiffusion through the change in ground state transition energy of the SL. Simulation with the proper selection of the interdiffusion coefficients results in proper fitting of the interface strain profile and PL transition energies. Using this method, interdiffusion behaviors of InGaAs/InP SLs with and without SiO2:P capping were analyzed. Interdiffusion coefficients of 5.8 X 10(-17) and 2.9 X 10(-17) cm(2)/s were obtained for the anion and cation sublattices respectively, when the SL without SiO2:P was annealed at 800 degrees C. (C) 1997 American Institute of Physics.

引用

页码：1670 / 1672

页数：3

共 9 条

[1] INTERDIFFUSION AND STRAIN RELAXATION IN (SIMGEN)P SUPERLATTICES [J].