NEW ENCAPSULANT SOURCE FOR III-V QUANTUM-WELL DISORDERING

被引：30

作者：

RAO, EVK

HAMOUDI, A

KRAUZ, P

JUHEL, M

THIBIERGE, H

机构：

[1] France Telecom/CNET-PAB, Laboratoire de Bagneux, 92220, Bagneux, 196, Avenue Henri Ravera

来源：

APPLIED PHYSICS LETTERS | 1995年 / 66卷 / 04期

关键词：

D O I：

10.1063/1.114060

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report here the characteristic features of a newly developed dielectric encapsulant cap layer, which after adequate thermal treatments, leads to a reproducible local alloy disorder in several III-V quantum well (QW) structures. Data are presented to demonstrate its universality, namely, its ability to promote alloy-disorder free of charge carriers either on group III or group V sublattice depending on the type of the QW structure. © 1995 American Institute of Physics.

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页码：472 / 474

页数：3

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[1] SPATIALLY SELECTIVE MODIFICATION OF GAAS/ALGAAS QUANTUM WELLS BY SIO2 CAPPING AND RAPID THERMAL ANNEALING [J].

CHI, JY ;

WEN, X ;

KOTELES, ES ;

ELMAN, B .

APPLIED PHYSICS LETTERS, 1989, 55 (09) :855-857

[2] GAAS/ALGAAS QUANTUM-WELL INTERMIXING USING SHALLOW ION-IMPLANTATION AND RAPID THERMAL ANNEALING [J].

ELMAN, B ;

KOTELES, ES ;

MELMAN, P ;

ARMIENTO, CA .

JOURNAL OF APPLIED PHYSICS, 1989, 66 (05) :2104-2107

[3] EFFECTS OF DIELECTRIC ENCAPSULATION AND AS OVERPRESSURE ON AL-GA INTERDIFFUSION IN ALXGA1-XAS-GAAS QUANTUM-WELL HETEROSTRUCTURES [J].

GUIDO, LJ ;

HOLONYAK, N ;

HSIEH, KC ;

KALISKI, RW ;

PLANO, WE ;

BURNHAM, RD ;

THORNTON, RL ;

EPLER, JE ;

PAOLI, TL .

JOURNAL OF APPLIED PHYSICS, 1987, 61 (04) :1372-1379

[4] OUTDIFFUSION THROUGH SILICON OXIDE AND SILICON NITRIDE LAYERS ON GALLIUM ARSENIDE [J].

GYULAI, J ;

MAYER, JW ;

MITCHELL, IV ;

RODRIGUEZ, V .

APPLIED PHYSICS LETTERS, 1970, 17 (08) :332-+

[5] X-RAY PHOTOELECTRON SPECTROSCOPIC STUDY OF RAPID THERMAL-PROCESSING ON SIO2 GAAS [J].

KATAYAMA, M ;

TOKUDA, Y ;

ANDO, N ;

INOUE, Y ;

USAMI, A ;

WADA, T .

APPLIED PHYSICS LETTERS, 1989, 54 (25) :2559-2561

[6] MODIFICATION OF THE SHAPES OF GAAS/ALGAAS QUANTUM WELLS USING RAPID THERMAL ANNEALING [J].

KOTELES, ES ;

ELMAN, B ;

HOLMSTROM, RP ;

MELMAN, P ;

CHI, JY ;

WEN, X ;

POWERS, J ;

OWENS, D ;

CHARBONNEAU, S ;

THEWALT, MLW .

SUPERLATTICES AND MICROSTRUCTURES, 1989, 5 (03) :321-325

[7] COMPOSITIONAL DISORDERING OF IN0.53GA0.47AS INP MULTIQUANTUM WELL STRUCTURES BY REPETITIVE RAPID THERMAL ANNEALING [J].

MIYAZAWA, T ;

IWAMURA, H ;

MIKAMI, O ;

NAGANUMA, M .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1989, 28 (06) :L1039-L1041

[8] INTEGRATED EXTERNAL-CAVITY INGAAS INP LASERS USING CAP-ANNEALING DISORDERING [J].

MIYAZAWA, T ;

IWAMURA, H ;

NAGANUMA, M .

IEEE PHOTONICS TECHNOLOGY LETTERS, 1991, 3 (05) :421-423

[9] ROOM-TEMPERATURE EXCITON-TRANSITIONS IN PARTIALLY INTERMIXED GAAS/ALGAAS SUPERLATTICES [J].

RALSTON, JD ;

OBRIEN, S ;

WICKS, GW ;

EASTMAN, LF .

APPLIED PHYSICS LETTERS, 1988, 52 (18) :1511-1513

[10] THE SYSTEM SIO2-P2O5 [J].

TIEN, TY ;

HUMMEL, FA .

JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 1962, 45 (09) :422-424