Taming the Mott transition for a novel Mott transistor

被引:64
作者
Inoue, Isao H. [1 ]
Rozenberg, Marcelo J. [2 ]
机构
[1] Natl Inst Adv Ind Sci & Technol, Tsukuba, Ibaraki 3058562, Japan
[2] Univ Paris 11, CNRS, UMR 8502, Lab Phys Solidez, F-91405 Orsay, France
关键词
D O I
10.1002/adfm.200800558
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
The breakthrough with a brief tutorial of the Mott transition and its control is presented. When atoms are placed regularly in space, they form a lattice structure. The orbitals of those atoms then combine to form a new set of eigenfunctions, which extend throughout the full lattice and correspond to plane waves modulated by a periodic function. Mott insulator should be metals according to band-structure theory, but turn out to be insulators due to strong Coulomb repulsive interactions among its electrons. Mott insulators are often seen in transition metal oxides such as NiO, CuO, and V2O 3. Since most of the oxides of the sandwiches are transition metal oxides, Mott transition are controlled by small electric voltages. The search for the best candidate material for novel ReRAM devices is going on, which may create a revolution in future electronics.
引用
收藏
页码:2289 / 2292
页数:4
相关论文
共 46 条
[21]   Current-induced nanochemistry: Local oxidation of thin metal films [J].
Martel, R ;
Schmidt, T ;
Sandstrom, RL ;
Avouris, P .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 1999, 17 (04) :1451-1456
[22]   Materials science - Who wins the nonvolatile memory race? [J].
Meijer, G. I. .
SCIENCE, 2008, 319 (5870) :1625-1626
[23]  
Mott N, 1990, METAL INSULATOR TRAN
[24]   Mott transition field effect transistor [J].
Newns, DM ;
Misewich, JA ;
Tsuei, CC ;
Gupta, A ;
Scott, BA ;
Schrott, A .
APPLIED PHYSICS LETTERS, 1998, 73 (06) :780-782
[25]   Evidence for an oxygen diffusion model for the electric pulse induced resistance change effect in transition-metal oxides [J].
Nian, Y. B. ;
Strozier, J. ;
Wu, N. J. ;
Chen, X. ;
Ignatiev, A. .
PHYSICAL REVIEW LETTERS, 2007, 98 (14)
[26]   Resistance switching memory device with a nanoscale confined current path [J].
Ogimoto, Yasushi ;
Tamai, Yukio ;
Kawasaki, Masashi ;
Tokura, Yoshinori .
APPLIED PHYSICS LETTERS, 2007, 90 (14)
[27]   Interfaces of correlated electron systems: Proposed mechanism for colossal electroresistance [J].
Oka, T ;
Nagaosa, N .
PHYSICAL REVIEW LETTERS, 2005, 95 (26) :1-4
[28]  
Oxley D. P., 1977, Electrocomponent Science and Technology, V3, P217, DOI 10.1155/APEC.3.217
[29]   Evidence of oxygen segregation at Ag/MgO interfaces [J].
Pippel, E ;
Woltersdorf, J ;
Gegner, J ;
Kirchheim, R .
ACTA MATERIALIA, 2000, 48 (10) :2571-2578
[30]   Crystal structures, electronic properties, and pressure-induced superconductivity of the tetrahedral cluster compounds GaNb4S8, GaNb4Se8, and GaTa4Se8 [J].
Pocha, R ;
Johrendt, D ;
Ni, BF ;
Abd-Elmeguid, MM .
JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 2005, 127 (24) :8732-8740