Raman study of N+-implanted ZnO

被引：104

作者：

Wang, JB

Zhong, HM

Li, ZF

Lu, W ^{[1
]}

机构：

[1] Chinese Acad Sci, Shanghai Inst Tech Phys, Natl Lab Infrared Phys, Shanghai 200083, Peoples R China

[2] Xiangtan Univ, Inst Modern Phys, Key Lab Adv Mat & Rheol Properties, Minist Educ, Xiangtan 411105, Peoples R China

来源：

APPLIED PHYSICS LETTERS | 2006年 / 88卷 / 10期

基金：

中国国家自然科学基金;

关键词：

D O I：

10.1063/1.2185261

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Raman scattering has been used to study the influence of nitrogen, a potential acceptor in ZnO, on the lattice dynamics of ZnO. It is found that N+ implantation increased the lattice disorder and induced some vibration modes to be Raman active at 275, 504, and 644 cm(-1), respectively. Based on theoretical and experimental study, the origin of the additional Raman peak at about 275 cm(-1) is attributed to the vibration of Zn atoms, where part of its first nearest neighbor O atoms are replaced by N atoms in the crystal lattice. (c) 2006 American Institute of Physics.

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页数：3

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