A simple droplet pinning method for polymer film deposition for measuring charge transport in a thin film transistor

被引:48
作者
Li, Hanying [1 ,2 ]
Mei, Jianguo [1 ]
Ayzner, Alexander L. [1 ,3 ]
Toney, Michael F. [3 ]
Tok, Jeffrey B. -H. [1 ]
Bao, Zhenan [1 ]
机构
[1] Stanford Univ, Dept Chem Engn, Stanford, CA 94305 USA
[2] Zhejiang Univ, Dept Polymer Sci & Engn, Hangzhou 310027, Peoples R China
[3] SLAC Natl Accelerator Lab, Stanford Synchrotron Radiat Lightsource, Menlo Pk, CA 94025 USA
基金
美国国家科学基金会;
关键词
Organic electronics; High-mobility; Field-effect transistors; Polymer film casting; Reduced material consumption; FIELD-EFFECT TRANSISTORS; REGIOREGULAR POLYTHIOPHENE; EFFECT MOBILITY; PERFORMANCE; MORPHOLOGY; COPOLYMER; AMBIPOLAR;
D O I
10.1016/j.orgel.2012.07.011
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Thin-film field-effect transistors (FETs) are widely used to evaluate charge transport properties of semiconducting polymers. Discovery of high performance materials require design and synthesis of new polymers. However, most polymers require multi-step synthesis and are difficult to be obtained in a large scale for comprehensive device evaluations. Here, we report a simple method to cast semiconducting polymer films from solutions with polymer concentration as low as 0.5 mg/mL, which is substantially less than typical values (similar to 10 mg/mL) used in conventional spin coating method. Here, we demonstrate that using this method, our cast films of a previously-reported polymer (PDPP-TT2T) exhibited field-effect mobility (mu(hole) = 0.89 +/- 0.13 cm(2) V s(-1), mu(e) = 0.025 +/- 0.005 cm(2) V-1 s(-1)), which is comparable to the reported values using the same device geometry. Furthermore, we extend this method to examine cast films of a pair of polymers (PDPP-3T-Ref. PDPP-3T-Si) to study the effect of siloxane substitution in the side chains on the molecular packing and their subsequent FEF performance. We observed that shorter pi-stacking distance (3.61 angstrom) for the siloxane-terminated polymer, when compared to that for the reference polymer (3.73 angstrom), resulted in improved FET performance (e.g., mu(hole) = 0.63 +/- 0.046 cm(2) V-1 s(-1) for PDPP-3T-Si vs mu(hole) = 0.17 +/- 0.062 cm(2) V-1 s(-1) for PDPP-3T-Ref). Taken together, this work presents an efficient alternative film-casting approach to produce polymer FETs that consumes much less material for their fabrication, lending viability for evaluation of various polymeric materials. (C) 2012 Elsevier B.V. All rights reserved.
引用
收藏
页码:2450 / 2460
页数:11
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