Hydrogenated microcrystalline silicon for photovoltaic applications

被引:31
作者
Wyrsch, N
Torres, P
Goerlitzer, M
Vallat, E
Kroll, U
Shah, A
Poruba, A
Vanecek, M
机构
[1] Univ Neuchatel, Inst Microtech, CH-2000 Neuchatel, Switzerland
[2] Acad Sci Czech Republ, Inst Phys, CZ-16200 Prague 6, Czech Republic
关键词
microcrystalline silicon; solar cells; opto-electronic properties;
D O I
10.4028/www.scientific.net/SSP.67-68.89
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Undoped hydrogenated microcrystalline silicon layers have been deposited by plasma CVD at low temperature at different power and silane dilution. Structural, optical and electrical properties of these layers have been investigated and are discussed in view of the deposition conditions. Entirely microcrystalline n-i-p solar cells have been deposited, incorporating the same layers as the intrinsic (i-) layer, in order to compare material and cell properties and identify the parameters important for photovoltaic applications.
引用
收藏
页码:89 / 100
页数:12
相关论文
共 42 条
[31]  
Torres P, 1997, MATER RES SOC SYMP P, V452, P767
[32]  
TORRES P, 1997, P 26 IEEE PHOT SPEC, P711
[33]   DIRECT MEASUREMENT OF THE DEEP DEFECT DENSITY IN THIN AMORPHOUS-SILICON FILMS WITH THE ABSOLUTE CONSTANT PHOTOCURRENT METHOD [J].
VANECEK, M ;
KOCKA, J ;
PORUBA, A ;
FEJFAR, A .
JOURNAL OF APPLIED PHYSICS, 1995, 78 (10) :6203-6210
[34]   PROPERTIES OF POLYCRYSTALLINE SILICON PREPARED BY CHEMICAL-TRANSPORT IN HYDROGEN PLASMA AT TEMPERATURES BETWEEN 80-DEGREES-C AND 400-DEGREES-C [J].
VEPREK, S ;
IQBAL, Z ;
OSWALD, HR ;
WEBB, AP .
JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1981, 14 (03) :295-308
[35]   PREPARATION OF THIN LAYERS OF GE AND SI BY CHEMICAL HYDROGEN PLASMA TRANSPORT [J].
VEPREK, S ;
MARECEK, V .
SOLID-STATE ELECTRONICS, 1968, 11 (07) :683-&
[36]   TEMPERATURE-DEPENDENCE OF THE CRYSTALLITE SIZE AND CRYSTALLINE FRACTION OF MICROCRYSTALLINE SILICON DEPOSITED FROM SILANE BY PLASMA CVD [J].
VEPREK, S ;
SAROTT, FA ;
RUCKSCHLOSS, M .
JOURNAL OF NON-CRYSTALLINE SOLIDS, 1991, 137 :733-736
[37]   PROPERTIES OF MICROCRYSTALLINE SILICON .4. ELECTRICAL-CONDUCTIVITY, ELECTRON-SPIN RESONANCE AND THE EFFECT OF GAS-ADSORPTION [J].
VEPREK, S ;
IQBAL, Z ;
KUHNE, RO ;
CAPEZZUTO, P ;
SAROTT, FA ;
GIMZEWSKI, JK .
JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1983, 16 (32) :6241-6262
[38]  
VEPREK S, 1988, MATER RES SOC S P, V118, P3
[39]  
Wagner H., 1983, SOLID STATE COMMUN, V48, P587
[40]   Microcrystalline p-i-n cells: a drift-controlled device? [J].
Wyrsch, N ;
Torres, P ;
Meier, J ;
Shah, A .
JOURNAL OF NON-CRYSTALLINE SOLIDS, 1998, 227 :1272-1276