PROPERTIES OF MICROCRYSTALLINE SILICON .4. ELECTRICAL-CONDUCTIVITY, ELECTRON-SPIN RESONANCE AND THE EFFECT OF GAS-ADSORPTION

被引：108

作者：

VEPREK, S

IQBAL, Z

KUHNE, RO

CAPEZZUTO, P

SAROTT, FA

GIMZEWSKI, JK

机构：

来源：

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS | 1983年 / 16卷 / 32期

关键词：

D O I：

10.1088/0022-3719/16/32/015

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：6241 / 6262

页数：22

共 50 条

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[J]. SOLID STATE COMMUNICATIONS, 1983, 47 (09) : 747 - 751
[7] TECHNOLOGY AND APPLICATIONS OF BROAD-BEAM ION SOURCES USED IN SPUTTERING .2. APPLICATIONS
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[8] HEILAND, 1982, SENSORS ACTUATORS, V2, P343
[9] HOLLINGER G, 1977, 7TH P INT VAC C 3RD, P2229
[10] RAMAN-SCATTERING FROM HYDROGENATED MICROCRYSTALLINE AND AMORPHOUS-SILICON
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