Reliability and performance scaling of very high speed SiGeHBTs

被引：12

作者：

Freeman, G ^{[1
]}

Rieh, JS ^{[1
]}

Yang, ZJ ^{[1
]}

Guarin, F ^{[1
]}

机构：

[1] IBM Corp, Microelect Semicond Res & Dev Ctr, Hopewell Jct, NY 12533 USA

来源：

MICROELECTRONICS RELIABILITY | 2004年 / 44卷 / 03期

关键词：

D O I：

10.1016/j.microrel.2003.11.003

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We discuss the SiGe HBT structural changes required for very high performance. The increase in collector concentration, affecting current density and avalanche current, appears to be the most fundamental concern for reliability. In device design, a narrow emitter and reduced poly-single-crystal interfacial oxide are important elements in minimizing device parameter shifts. From the application point of view, avalanche hot-carriers appear to present new constraints, which may be managed through limiting voltage (to 1.5x-2x BVCEO), or through circuit designs robust to base current parameter shifts. (C) 2003 Elsevier Ltd. All rights reserved.

引用

页码：397 / 410

页数：14

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