Nanoscale Resistive Switching of a Copper-Carbon-Mixed Layer for Nonvolatile Memory Applications

被引：33

作者：

Choi, Hyejung ^{[1
]}

Pyun, Myeonobum ^{[1
]}

Kim, Tae-Wook ^{[1
]}

Hasan, Musarrat ^{[1
]}

Dong, Rui ^{[1
]}

Lee, Joonmyoung ^{[1
]}

Park, Ju-Bong ^{[1
]}

Yoon, Jaesik ^{[1
]}

Seong, Dong-jun ^{[1
]}

Lee, Takhee ^{[1
]}

Hwang, Hyunsang ^{[1
]}

机构：

[1] Gwangju Inst Sci & Technol, Dept Mat Sci & Engn, Kwangju 500712, South Korea

来源：

IEEE ELECTRON DEVICE LETTERS | 2009年 / 30卷 / 03期

关键词：

Cell array; copper-carbon-mixed (Cu-C) layer; resistance random access memory; resistive switching;

D O I：

10.1109/LED.2008.2012273

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The nanoscale resistance switching property of copper-carbon-mixed (Cu-C) layer was investigated for nonvolatile memory applications. The Cu-C layer of the cross-point cell array showed typical filament switching with two orders of on/off ratio, exhibiting stable resistance switching and a narrow distribution of set and reset voltages in the nanoscale junction. In addition, we investigated the area dependence of operation current. Based on these results and current-voltage dependence on temperature, we discussed a potential switching mechanism of Cu-C layer.

引用

页码：302 / 304

页数：3

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