A Pedagogical Perspective on Ambipolar FETs

被引：63

作者：

Kang, Moon Sung ^{[2
]}

Frisbie, C. Daniel ^{[1
]}

机构：

[1] Univ Minnesota, Minneapolis, MN 55455 USA

[2] Soongsil Univ, Dept Chem Engn, Seoul 156743, South Korea

来源：

CHEMPHYSCHEM | 2013年 / 14卷 / 08期

基金：

美国国家科学基金会; 新加坡国家研究基金会;

关键词：

ambipolar field-effect transistors; channel potential; charge carriers; currentvoltage characteristics; transistor operation regime; FIELD-EFFECT TRANSISTORS; LIGHT-EMITTING TRANSISTORS; TRANSPORT; EMISSION; CHANNEL;

D O I：

10.1002/cphc.201300014

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The operation of an ambipolar field-effect transistor (FET) is described using a simple diagram depicting the gate voltage and channel potential profile relative to the injection threshold voltage of charge carriers. From this diagram, the transition between transistor-operation regimes and the resulting currentvoltage relations can be easily understood. Also, a practical guidance for the operation of an ambipolar FET is provided. In particular, conditions to achieve the true ambipolar regime, which is of particular interest for light-emitting transistor operation, and a correct method to extract electron and hole mobilities from a given currentvoltage curve are presented.

引用

页码：1547 / 1552

页数：6

共 20 条

[1] Carbon-nanotube photonics and optoelectronics [J].