Effects of fluorocarbon films on CF radical in CF4/H2 plasma

被引:17
作者
Arai, T [1 ]
Goto, M [1 ]
Horikoshi, K [1 ]
Mashino, S [1 ]
Aikyo, S [1 ]
机构
[1] Kanagawa Inst Technol, Dept Elect & Elect Engn, Atsugi, Kanagawa 2430292, Japan
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 1999年 / 38卷 / 7B期
关键词
etching plasma; CF radical; fluorocarbon films; CF4/H-2; plasma; laser-induced fluorescence;
D O I
10.1143/JJAP.38.4377
中图分类号
O59 [应用物理学];
学科分类号
摘要
The behavior of CF radicals in CF4/H-2 plasma was studied as a function of the fluorocarbon film thickness grown on the inner wall in de-pulsed CF4/H-2 hollow cathode discharge plasma. Laser-induced fluorescence was used to examine the temporal. behavior and radial distribution of the CF radical density. The thickness of the fluorocarbon films grown on the inner wall of the cylindrical hollow cathode was measured to investigate the influence of fluorocarbon film formation on the CF radical density in the plasma. For CF4/98%H-2 discharge plasma, the radial distribution of the CF radical density deviated slightly from the zeroth-order Bessel function. The radial distribution of CF radical density changed to a uniform profile in CF4/98%H-2 discharge plasma after exposure of the tube wall to CF4/20%H-2 discharge.
引用
收藏
页码:4377 / 4379
页数:3
相关论文
共 11 条
[1]   MEASUREMENTS OF DIFFUSION-COEFFICIENT OF CF2 RADICAL IN DC PULSED CF4 DISCHARGE PLASMA [J].
ARAI, T ;
GOTO, M ;
ASOH, Y ;
TAKAYAMA, D ;
SHIMIZU, T .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1993, 32 (10A) :L1469-L1470
[2]   SPATIALLY AND TEMPORALLY RESOLVED LASER-INDUCED FLUORESCENCE MEASUREMENTS OF CF2 AND CF RADICALS IN A CF4 RF PLASMA [J].
BOOTH, JP ;
HANCOCK, G ;
PERRY, ND ;
TOOGOOD, MJ .
JOURNAL OF APPLIED PHYSICS, 1989, 66 (11) :5251-5257
[3]  
Booth JP, 1987, MATER RES SOC S P, V98, P135
[5]  
Chapman BN, 1980, Glow Discharges Processes J, DOI DOI 10.1063/1.2914660
[6]   SPATIAL-DISTRIBUTION AND SURFACE LOSS OF CF3 AND CF2 RADICALS IN A CF4 ETCHING PLASMA [J].
HIKOSAKA, Y ;
TOYODA, H ;
SUGAI, H .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1993, 32 (3A) :L353-L356
[7]   MEASUREMENTS OF THE CF RADICAL IN DC PULSED CF4/H2 DISCHARGE PLASMA USING INFRARED DIODE-LASER ABSORPTION-SPECTROSCOPY [J].
MAGANE, M ;
ITABASHI, N ;
NISHIWAKI, N ;
GOTO, T ;
YAMADA, C ;
HIROTA, E .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1990, 29 (05) :L829-L832
[8]  
MURAYAMA K, 1995, J PHYS D, V28, P884
[9]   SILICON ETCHING MECHANISMS IN A CF4/H2 GLOW-DISCHARGE [J].
OEHRLEIN, GS ;
WILLIAMS, HL .
JOURNAL OF APPLIED PHYSICS, 1987, 62 (02) :662-672
[10]   EMISSION SPECTRUM OF CF [J].
PORTER, TL ;
MANN, DE ;
ACQUISTA, N .
JOURNAL OF MOLECULAR SPECTROSCOPY, 1965, 16 (02) :228-&