High Purity GaAs Nanowires Free of Planar Defects: Growth and Characterization

被引：94

作者：

Joyce, Hannah J. ^{[1
]}

Gao, Qiang ^{[1
]}

Tan, H. Hoe ^{[1
]}

Jagadish, Chennupati ^{[1
]}

Kim, Yong ^{[2
]}

Fickenscher, Melodie A. ^{[3
]}

Perera, Saranga ^{[3
]}

Hoang, Thang Ba ^{[3
]}

Smith, Leigh M. ^{[3
]}

Jackson, Howard E. ^{[3
]}

Yarrison-Rice, Jan M. ^{[4
]}

Zhang, Xin ^{[5
,6
]}

Zou, Jin ^{[5
,6
]}

机构：

[1] Australian Natl Univ, Dept Elect Mat Engn, Res Sch Phys Sci & Engn, Canberra, ACT 0200, Australia

[2] Dong A Univ, Dept Phys, Pusan 604714, South Korea

[3] Univ Cincinnati, Dept Phys, Cincinnati, OH 45221 USA

[4] Miami Univ, Dept Phys, Oxford, OH 45056 USA

[5] Univ Queensland, Sch Engn, Brisbane, Qld 4072, Australia

[6] Univ Queensland, Ctr Microscopy & Microanal, Brisbane, Qld 4072, Australia

来源：

ADVANCED FUNCTIONAL MATERIALS | 2008年 / 18卷 / 23期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1002/adfm.200800625

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

We investigate how to tailor the structural, crystallographic and optical properties of GaAs nanowires. Nanowires were grown by Au nanoparticle-catalyzed metalorganic chemical vapor deposition. A high arsine flow rate, that is, a high ratio of group V to group I I I precursors, imparts significant advantages. It dramatically reduces planar crystallographic defects and reduces intrinsic carbon dopant incorporation. Increasing V/III ratio further, however, instigates nanowire kinking and increases nanowire tapering. By choosing an intermediate V/III ratio we achieve uniform, vertically aligned GaAs nanowires, free of planar crystallographic defects, with excellent optical properties and high purity. These findings will greatly assist the development of future GaAs nanowire-based electronic and optoelectronic devices, and are expected to be more broadly relevant to the rational synthesis of other III-V nanowires.

引用

页码：3794 / 3800

页数：7

共 61 条

[1] INCORPORATION AND CHARACTERIZATION OF ACCEPTORS IN EPITAXIAL GAAS [J].