Ultraviolet photoresponse of porous ZnO thin films prepared by unbalanced magnetron sputtering

被引：66

作者：

Sharma, P ^{[1
]}

Mansingh, A ^{[1
]}

Sreenivas, K ^{[1
]}

机构：

[1] Univ Delhi, Dept Phys & Astrophys, Delhi 110007, India

来源：

APPLIED PHYSICS LETTERS | 2002年 / 80卷 / 04期

关键词：

D O I：

10.1063/1.1445480

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Fast ultraviolet photoresponse is observed in ZnO thin films prepared by unbalanced magnetron sputtering. Films with a porous microstructure and a mixed (100), (002) and (101) crystallographic orientation exhibit photoresponse with good linearity and minimal aging effects. A fast rise time of 792 ms and a fall time of 805 ms are observed under low intensity (9.5 mW/cm(2), lambda=365 nm) ultraviolet light. (C) 2002 American Institute of Physics.

引用

页码：553 / 555

页数：3

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