High Aspect Ratio Sub-15 nm Silicon Trenches From Block Copolymer Templates

被引：84

作者：

Gu, Xiaodan ^{[2
]}

Liu, Zuwei ^{[3
]}

Gunkel, Ilja ^{[4
]}

Chourou, S. T. ^{[4
]}

Hong, Sung Woo ^{[2
]}

Olynick, Deirdre L. ^{[1
]}

Russell, Thomas P. ^{[2
]}

机构：

[1] Univ Calif Berkeley, Lawrence Berkeley Natl Lab, Mol Foundry, Berkeley, CA 94720 USA

[2] Univ Massachusetts, Dept Polymer Sci & Engn, Amherst, MA 01003 USA

[3] Oxford Instruments, Concord, MA 01742 USA

[4] Univ Calif Berkeley, Lawrence Berkeley Natl Lab, Adv Light Source, Berkeley, CA 94720 USA

来源：

ADVANCED MATERIALS | 2012年 / 24卷 / 42期

关键词：

block copolymer lithography; silicon patterning; cryo-ICP etching; high selectivity etching; nano-imprinting lithography; THIN-FILM; ARRAYS; FABRICATION;

D O I：

10.1002/adma.201202361

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

High-aspect-ratio sub-15-nm silicon trenches are fabricated directly from plasma etching of a block copolymer mask. A novel method that combines a block copolymer reconstruction process and reactive ion etching is used to make the polymer mask. Silicon trenches are characterized by various methods and used as a master for subsequent imprinting of different materials. Silicon nanoholes are generated from a block copolymer with cylindrical microdomains oriented normal to the surface.

引用

页码：5688 / 5694

页数：7

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