Influence of doping on facet formation at the SiO2/Si interface

被引：5

作者：

Gallas, B ^{[1
]}

Hartmann, JM ^{[1
]}

Breton, G ^{[1
]}

Harris, JJ ^{[1
]}

Zhang, J ^{[1
]}

Joyce, BA ^{[1
]}

机构：

[1] Univ London Imperial Coll Sci Technol & Med, Interdisciplinary Res Ctr Semicond Mat, London SW7 2BZ, England

来源：

SURFACE SCIENCE | 1999年 / 440卷 / 1-2期

基金：

英国工程与自然科学研究理事会;

关键词：

doping; gas-source molecular beam epitaxy; selective epitaxial growth; Si;

D O I：

10.1016/S0039-6028(99)00663-9

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The effect of doping on the surface morphology of Si layers grown selectively inside the windows of SiO2-masked Si(001) substrates has been studied using atomic force microscopy and transmission electron microscopy. It is found that boron has a minimal influence on the surface morphology, while arsenic favours the creation of high-index facets at the expense of the (001) facet. (C) 1999 Elsevier Science B.V. All rights reserved.

引用

页码：41 / 48

页数：8

共 23 条

[1] LIMITING CONDITIONS OF SI SELECTIVE EPITAXIAL-GROWTH IN SI2H6 GAS-SOURCE MOLECULAR-BEAM EPITAXY [J].

AKETAGAWA, K ;

TATSUMI, T ;

SAKAI, J .

APPLIED PHYSICS LETTERS, 1991, 59 (14) :1735-1736

[2] GROWTH-MORPHOLOGY AND THE EQUILIBRIUM SHAPE - THE ROLE OF SURFACTANTS IN GE/SI ISLAND FORMATION [J].

EAGLESHAM, DJ ;

UNTERWALD, FC ;

JACOBSON, DC .

PHYSICAL REVIEW LETTERS, 1993, 70 (07) :966-969

[3]

FERNANDEZ JM, 1995, MATER SCI TECH SER, V11, P396, DOI 10.1179/026708395790165057

[4] Alloy effects in boron doped Si-rich SiGe bulk crystals [J].

Franz, M ;

Pressel, K ;

Gaworzewski, P .

JOURNAL OF APPLIED PHYSICS, 1998, 84 (02) :709-712

[5] Nanometer-scale Si selective epitaxial growth on Si(001) surfaces using the thermal decomposition of ultrathin oxide films [J].

Fujita, K ;

Watanabe, H ;

Ichikawa, M .

APPLIED PHYSICS LETTERS, 1997, 70 (21) :2807-2809

[6] PB PREADSORPTION FACILITATES ISLAND FORMATION DURING GA GROWTH ON SI(111) [J].

HIBINO, H ;

SHIMIZU, N ;

SUMITOMO, K ;

SHINODA, Y ;

NISHIOKA, T ;

OGINO, T .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 1994, 12 (01) :23-28

[7] SELECTIVE GROWTH CONDITION IN DISILANE GAS SOURCE SILICON MOLECULAR-BEAM EPITAXY [J].

HIRAYAMA, H ;

TATSUMI, T ;

AIZAKI, N .

APPLIED PHYSICS LETTERS, 1988, 52 (26) :2242-2243

[8] Surface segregation of arsenic and phosphorus from buried layers during Si molecular beam epitaxy [J].

Hobart, KD ;

Kub, FJ ;

Jemigan, GG ;

Thompson, PE .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1996, 14 (03) :2229-2232

[9] SURFACTANT-MEDIATED CRYSTAL-GROWTH OF SEMICONDUCTORS [J].

KANDEL, D ;

KAXIRAS, E .

PHYSICAL REVIEW LETTERS, 1995, 75 (14) :2742-2745

[10] Step-driven molecular adsorption of Sb on Si(111) [J].

Ladeveze, M ;

Treglia, G ;

Muller, P ;

d'Avitaya, FA .

SURFACE SCIENCE, 1998, 395 (2-3) :317-325

← 1 2 3 →