Alloy effects in boron doped Si-rich SiGe bulk crystals

被引：20

作者：

Franz, M ^{[1
]}

Pressel, K ^{[1
]}

Gaworzewski, P ^{[1
]}

机构：

[1] Inst Semicond Phys, D-15230 Frankfurt, Germany

来源：

JOURNAL OF APPLIED PHYSICS | 1998年 / 84卷 / 02期

关键词：

D O I：

10.1063/1.368126

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have investigated boron doped Si1-xGex bulk crystals over the composition range 0 less than or equal to x less than or equal to 0.13 by photoconductivity, photoluminescence, and temperature-dependent Hall effect measurements. Hall effect measurements yield the relation E-I=(44.4-108x) meV for the change of the boron ionization energy E-I with alloy composition. The far-infrared photoconductivity onset caused by the shallow acceptor boron does not shift as much to lower energies with increasing Ge content as previously reported. Transitions that involve excited levels of the shallow acceptor boron are recognizable as a redshift of the photoconductivity onset with increasing temperature. Comparison of the Hall effect data with the shift of the photoconductivity spectra and the evaluation of photoluminescence linewidths give experimental evidence for an inhomogeneous distribution of Ge atoms in the alloy. (C) 1998 American Institute of Physics. [S0021-8979(98)00314-4]

引用

页码：709 / 712

页数：4

共 13 条

[1] Single crystal growth of Si1-xGex by the Czochralski technique [J].