Morphology of island nuclei in epitaxial GaAs/Si

被引：9

作者：

Vila, A

Cornet, A

Morante, JR

机构：

[1] EME, Depto. Fis. Apl. i Electronica, Universitat de Barcelona, 08028 Barcelona

来源：

MATERIALS LETTERS | 1997年 / 31卷 / 3-6期

关键词：

morphology; island nuclei; epitaxial; GaAs/Si;

D O I：

10.1016/S0167-577X(96)00297-2

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Two basic facet types have been found in MBE GaAs on Si:{111}, associated with large densities of planar defects and twins parallel to the facets, and {113}, in larger clusters relaxed mainly by misfit dislocations. Stability in both cases is well described by the surface atomic structure and its reactivity according to the basic rules of each atom type.

引用

页码：339 / 344

页数：6

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