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Deep ultraviolet light-emitting diodes

被引：60
作者：
Hu, X.
Deng, J.
Zhang, J. P.
Lunev, A.
Bilenko, Y.
Katona, T.
Shur, M. S.
Gaska, R.
Shatalov, M.
Khan, A.
机构：
[1] Sensor Elect Technol Inc, Columbia, SC 29209 USA
[2] Univ S Carolina, Dept Elect Engn, Columbia, SC 29208 USA
[3] Rensselaer Polytech Inst, Dept Elect Comp & Syst Engn, Troy, NY 12180 USA
来源：
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 2006年 / 203卷 / 07期
关键词：
D O I：
10.1002/pssa.200565266
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We report on the development of AlGaN-based deep UV light emitting diodes (LEDs) with emission wavelengths from 254 to 340 nm, focusing on the improvement of 280 nm LEDs efficiency. Under optimal device structure the UV LEDs efficiency was found to strongly depend on the AlGaN material quality. Milliwatt-power level LEDs were demonstrated for the 254-340 nm spectral range, and for 280 nm LEDs powers reaching 2.5 mW was achieved at 20 mA DC. (c) 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
引用
收藏
页码：1815 / 1818
页数：4
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