Pulsed atomic-layer epitaxy of ultrahigh-quality AlxGa1-xN structures for deep ultraviolet emissions below 230 nm

被引：121

作者：

Zhang, JP ^{[1
]}

Khan, MA ^{[1
]}

Sun, WH ^{[1
]}

Wang, HM ^{[1
]}

Chen, CQ ^{[1
]}

Fareed, Q ^{[1
]}

Kuokstis, E ^{[1
]}

Yang, JW ^{[1
]}

机构：

[1] Univ S Carolina, Dept Elect Engn, Columbia, SC 29208 USA

来源：

APPLIED PHYSICS LETTERS | 2002年 / 81卷 / 23期

关键词：

D O I：

10.1063/1.1528726

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In this letter, we report the pulsed atomic-layer epitaxy of ultrahigh-quality AlN epilayers and AlN/Al0.85Ga0.15N multiple quantum wells (MQWs) on basal plane sapphire substrates. Symmetric and asymmetric x-ray diffraction (XRD) measurements and room-temperature (RT) photoluminescence (PL) were used to establish the ultrahigh structural and optical quality. Strong band-edge RT PL at 208 and 228 nm was obtained from the AlN epilayers and the AlN/Al0.85Ga0.15N MQWs. These data clearly establish their suitability for sub-250-nm deep UV emitters. (C) 2002 American Institute of Physics.

引用

页码：4392 / 4394

页数：3

共 28 条

[1] Sub-milliwatt power III-N light emitting diodes at 285 nm
Adivarahan, V
Zhang, JP
Chitnis, A
Shuai, W
Sun, J
Pachipulusu, R
Shatalov, M
Khan, MA
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 2002, 41 (4B): : L435 - L436
[2] Submilliwatt operation of AlInGaN based multifinger-design 315 nm light emitting diode (LED) over sapphire substrate
Chitnis, A
Adivarahan, V
Shatalov, M
Zhang, JP
Gaevski, M
Wu, SA
Pachipulusu, R
Sun, J
Simin, K
Simin, G
Yang, JW
Khan, MA
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 2002, 41 (3B): : L320 - L322
[3] 324 nm light emitting diodes with milliwatt powers
Chitnis, A
Zhang, JP
Adivarahan, V
Shuai, W
Sun, J
Shatalov, M
Yang, JW
Simin, G
Khan, MA
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2002, 41 (4B): : L450 - L451
[4] AlGaN/GaN quantum well ultraviolet light emitting diodes
Han, J
Crawford, MH
Shul, RJ
Figiel, JJ
Banas, M
Zhang, L
Song, YK
Zhou, H
Nurmikko, AV
[J]. APPLIED PHYSICS LETTERS, 1998, 73 (12) : 1688 - 1690
[5] Heying B, 1996, APPL PHYS LETT, V68, P643, DOI 10.1063/1.116495
[6] Efficient 230-280 nm emission from high-Al-content AlGaN-based multiquantum wells
Hirayama, H
Enomoto, Y
Kinoshita, A
Hirata, A
Aoyagi, Y
[J]. APPLIED PHYSICS LETTERS, 2002, 80 (01) : 37 - 39
[7] Suppression of phase separation of AlGaN during lateral growth and fabrication of high-efficiency UV-LED on optimized AlGaN
Iwaya, M
Terao, S
Sano, T
Ukai, T
Nakamura, R
Kamiyama, S
Amano, H
Akasaki, I
[J]. JOURNAL OF CRYSTAL GROWTH, 2002, 237 (1-4 II) : 951 - 955
[8] Iwaya M, 2001, PHYS STATUS SOLIDI A, V188, P117, DOI 10.1002/1521-396X(200111)188:1<117::AID-PSSA117>3.0.CO
[9] 2-X
[10] LOW-PRESSURE METALORGANIC CHEMICAL VAPOR-DEPOSITION OF ALN OVER SAPPHIRE SUBSTRATES
KHAN, MA
KUZNIA, JN
SKOGMAN, RA
OLSON, DT
MACMILLAN, M
CHOYKE, WJ
[J]. APPLIED PHYSICS LETTERS, 1992, 61 (21) : 2539 - 2541

← 1 2 3 →