Crack-free thick AlGaN grown on sapphire using AlN/AlGaN superlattices for strain management

被引：189

作者：

Zhang, JP ^{[1
]}

Wang, HM ^{[1
]}

Gaevski, ME ^{[1
]}

Chen, CQ ^{[1
]}

Fareed, Q ^{[1
]}

Yang, JW ^{[1
]}

Simin, G ^{[1
]}

Khan, MA ^{[1
]}

机构：

[1] Univ S Carolina, Dept Elect Engn, Columbia, SC 29208 USA

来源：

APPLIED PHYSICS LETTERS | 2002年 / 80卷 / 19期

关键词：

D O I：

10.1063/1.1477620

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report on an AlN/AlGaN superlattice approach to grow high-Al-content thick n(+)-AlGaN layers over c-plane sapphire substrates. Insertion of a set of AlN/AlGaN superlattices is shown to significantly reduce the biaxial tensile strain, thereby resulting in 3-mum-thick, crack-free Al0.2Ga0.8N layers. These high-quality, low-sheet-resistive layers are of key importance to avoid current crowding in quaternary AlInGaN multiple-quantum-well deep-ultraviolet light-emitting diodes over sapphire substrates. (C) 2002 American Institute of Physics.

引用

页码：3542 / 3544

页数：3

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