Low-temperature-deposited AlGaN interlayer for improvement of AlGaN/GaN heterostructure

被引：87

作者：

Kamiyama, S

Iwaya, M

Hayashi, N

Takeuchi, T

Amano, H

Akasaki, I

Watanabe, S

Kaneko, Y

Yamada, N

机构：

[1] Meijo Univ, High Tech Res Ctr, Tempaku Ku, Nagoya, Aichi 4688502, Japan

[2] Meijo Univ, Dept Elect & Elect Engn, Tempaku Ku, Nagoya, Aichi 4688502, Japan

[3] Meijo Univ, Dept Mat Sci & Engn, Tempaku Ku, Nagoya, Aichi 4688502, Japan

[4] Agilent Labs, Takatsu Ku, Kawasaki, Kanagawa 2130012, Japan

来源：

JOURNAL OF CRYSTAL GROWTH | 2001年 / 223卷 / 1-2期

基金：

日本学术振兴会;

关键词：

crystal morphology; doping; metalorganic chemical vapor deposition; nitrides; semiconducting gallium compounds; light emitting diodes;

D O I：

10.1016/S0022-0248(00)01017-4

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

We have studied the effect of a low-temperature-deposited (LT-) AlGaN interlayer on AlGaN/GaN heterostructure. High-crystalline-quality and crack-free AlGaN layers covering the entire compositional range were realized using the LT-AIN interlayer. We also showed that AlGaN is applicable as the LT-interlayer under the condition that the AlN molar fraction of the LT-AlGaN interlayer is equal to or larger than that of the overgrown,AlGaN layer. Furthermore, electrically conductive LT-Al0.1Ga0.9N has been realized with an intermediate deposition temperature and very high SiH4 flow rate, in addition to the high-quality overgrown AlGaN layer, It is thought that the LT-interlayer technology call overcome the challenges of glowing a high-quality AlGaN layer with high AlN mole fraction on GaN layers. (C) 2001 Published by Elsevier Science B.V.

引用

页码：83 / 91

页数：9

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