Improvement of far-field pattern in nitride laser diodes

被引：29

作者：

Takeuchi, T

Detchprohm, T

Iwaya, M

Hayashi, N

Isomura, K

Kimura, K

Yamaguchi, M

Amano, H

Akasaki, I

Kaneko, Y

Shioda, R

Watanabe, S

Hidaka, T

Yamaoka, Y

Kaneko, Y

Yamada, N

机构：

[1] Meijo Univ, Dept Elect & Elect Engn, High Tech Res Ctr, Tempaku Ku, Nagoya, Aichi 4688502, Japan

[2] Hewlett Packard Labs, Takatsu Ku, Kawasaki, Kanagawa 2130012, Japan

来源：

APPLIED PHYSICS LETTERS | 1999年 / 75卷 / 19期

关键词：

D O I：

10.1063/1.125201

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have clearly demonstrated a single spot in a far-field pattern of nitride-based laser diodes with a thick n-AlGaN layer/low-temperature-deposited buffer layer/sapphire. This AlGaN-based structure has realized a crack-free 1-mu m-thick n-type Al0.06Ga0.94N cladding layer, leading to suppression of optical leakage from the waveguide region to the underlying layer and improvement of optical confinement. The threshold current of the laser diode is about 230 mA, which is comparable to or better than that of our laser diodes with the conventional GaN-based structure. (C) 1999 American Institute of Physics. [S0003-6951(99)03045-4].

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页码：2960 / 2962

页数：3

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