Theoretical studies on nitrogen-oxygen complexes in silicon

被引：28

作者：

Gali, A ^{[1
]}

Miro, J ^{[1
]}

Deak, P ^{[1
]}

Ewels, CP ^{[1
]}

Jones, R ^{[1
]}

机构：

[1] UNIV EXETER,DEPT PHYS,EXETER EX4 4QL,DEVON,ENGLAND

来源：

JOURNAL OF PHYSICS-CONDENSED MATTER | 1996年 / 8卷 / 41期

关键词：

D O I：

10.1088/0953-8984/8/41/016

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Semi-empirical PM3 cluster calculations are used to show that stable, electrically active NO complexes may exist in silicon. Based on their relative stability with respect to oxygen and nitrogen pairs, the retardation of thermal double donor formation in the presence of nitrogen is explained, but an equilibrium concentration much less than that of NN pairs is predicted. It is also shown that interaction of NO with a single nitrogen atom creates a bistable NNO defect, while encounter with an oxygen or an NN pair preserves the electrical activity of the NO centre. The possible role of the NO complex in shallow thermal donor formation is discussed.

引用

页码：7711 / 7722

页数：12

共 47 条

[31] THERMAL DONORS IN SILICON - AN INVESTIGATION OF THEIR STRUCTURE WITH ELECTRON-NUCLEAR DOUBLE-RESONANCE [J].