Improved one-phonon confinement model for an accurate size determination of silicon nanocrystals

被引:230
作者
Paillard, V
Puech, P
Laguna, MA
Carles, R
Kohn, B
Huisken, F
机构
[1] Univ Toulouse 3, CNRS, Phys Solides Lab, F-31062 Toulouse 4, France
[2] Max Planck Inst Stromungsforsch, D-37073 Gottingen, Germany
关键词
D O I
10.1063/1.370988
中图分类号
O59 [应用物理学];
学科分类号
摘要
In this article, we show how the well-known one-phonon confinement model can be improved to determine the diameter of silicon nanocrystalline spheres from the optical phonon wave-number shift, even using a physical-meaning weighting function. We show that the fundamental parameter is the knowledge of the phonon dispersion. The accuracy of our approach is supported by experimental data obtained by selective UV Raman scattering on nanocrystalline silicon thin films produced by size-selected silicon cluster beam deposition. (C) 1999 American Institute of Physics. [S0021-8979(99)03316-2].
引用
收藏
页码:1921 / 1924
页数:4
相关论文
共 16 条
[11]   Resonant Raman scattering in polycrystalline silicon thin films [J].
Paillard, V ;
Puech, P ;
Laguna, MA ;
Temple-Boyer, P ;
Caussat, B ;
Couderc, JP ;
de Mauduit, B .
APPLIED PHYSICS LETTERS, 1998, 73 (12) :1718-1720
[12]   THE ONE PHONON RAMAN-SPECTRUM IN MICROCRYSTALLINE SILICON [J].
RICHTER, H ;
WANG, ZP ;
LEY, L .
SOLID STATE COMMUNICATIONS, 1981, 39 (05) :625-629
[13]   RESONANT RAMAN LINE-SHAPE OF OPTIC PHONONS IN GAAS/ALAS MULTIPLE-QUANTUM WELLS [J].
SHIELDS, AJ ;
CARDONA, M ;
EBERL, K .
PHYSICAL REVIEW LETTERS, 1994, 72 (03) :412-415
[14]  
Yu Y., 1996, FUNDAMENTALS SEMICON
[15]   Raman shifts in Si nanocrystals [J].
Zi, J ;
Buscher, H ;
Falter, C ;
Ludwig, W ;
Zhang, KM ;
Xie, XD .
APPLIED PHYSICS LETTERS, 1996, 69 (02) :200-202
[16]   Comparison of models for Raman spectra of Si nanocrystals [J].
Zi, J ;
Zhang, KM ;
Xie, XD .
PHYSICAL REVIEW B, 1997, 55 (15) :9263-9266