Tunneling spectroscopy of InAs wetting layers and self-assembled quantum dots: Resonant tunneling through two- and zero-dimensional electronic states

被引：47

作者：

Suzuki, T

Nomoto, K

Taira, K

Hase, I

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 1997年 / 36卷 / 3B期

关键词：

resonant tunneling; Stranski-Krastanow growth; self-assembled quantum dot; wetting layer; InAs;

D O I：

10.1143/JJAP.36.1917

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Using GaAs/AlGaAs/InAs/AlGaAs/GaAs tunneling diodes, we have investigated the resonant tunneling current through InAs wetting layers and self-assembled quantum dots obtained from the Stranski-Krastanow growth mode. For InAs layers both with and without the quantum dots, resonant tunneling current through two-dimensional (2D) electronic states in the wetting layers is observed. From this observation, we can determine the 2D ground state energy. On the other hand, current peaks due to resonant tunneling from three-dimensional (3D) electronic states in the emitter to zero-dimensional (0D) states in the quantum dots are observed only for the case of an InAs layer with the quantum dots.

引用

页码：1917 / 1921

页数：5

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