Growth of perovskite-type oxides (RE, Sr)(Al, Ta)O3 as substrates for GaN epitaxial growth (RE = La, Nd)

被引：15

作者：

Ito, M ^{[1
]}

Shimamura, K ^{[1
]}

Pawlak, DA ^{[1
]}

Fukuda, T ^{[1
]}

机构：

[1] Tohoku Univ, Inst Mat Res, Aoba Ku, Sendai, Miyagi 9808577, Japan

来源：

JOURNAL OF CRYSTAL GROWTH | 2002年 / 235卷 / 1-4期

关键词：

lattice mismatch; substrates; Czochralski method; hydride vapor phase epitaxy; perovskites;

D O I：

10.1016/S0022-0248(01)01798-5

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

ew compositions for perovskite-type oxides (RE, Sr)(Al, Ta)O-3 (RE = La, Nd) were investigated from solid-state reactions and grown by Czochralski method as substrates for GaN epitaxial growth. These compounds crystallize in a cubic system. The lattice mismatch with GaN is in the range of 1.24-1.70%. The linear expansion coefficients are around 10 x 10(-6) K-1. Hydride vapor phase epitaxy growth of GaN was performed on (La, Sr)(Al, Ta)O-3 substrates. Free-standing GaN wafers similar to300 mum thick were obtained. (C) 2002 Elsevier Science B.V. All rights reserved.

引用

页码：277 / 282

页数：6

共 14 条

[1]

[Anonymous], 1926, Akad. Oslo I. Mat. Natur

[2] MODIFIED MIXED-OXIDE PEROVSKITES 0.7SR(AL1/2B1/2)O-3-CENTER-DOT-0.3LAALO(3) AND 0.7SR(AL1/2B1/2)O-3-CENTER-DOT-0.3NDGAO(3) (B=TA5+ OR NB5+) FOR HIGH-T-C SUPERCONDUCTOR SUBSTRATE APPLICATIONS [J].

GUO, RY ;

RAVINDRANATHAN, P ;

SELVARAJ, U ;

BHALLA, AS ;

CROSS, LE ;

ROY, R .

JOURNAL OF MATERIALS SCIENCE, 1994, 29 (19) :5054-5058

[3] Crystal growth and liquid-phase epitaxy of gallium nitride [J].

Klemenz, C ;

Scheel, HJ .

JOURNAL OF CRYSTAL GROWTH, 2000, 211 (1-4) :62-67

[4] MIXED-PEROVSKITE SUBSTRATES FOR HIGH-TC SUPERCONDUCTORS [J].

MATEIKA, D ;

KOHLER, H ;

LAUDAN, H ;

VOLKEL, E .

JOURNAL OF CRYSTAL GROWTH, 1991, 109 (1-4) :447-456

[5] CANDELA-CLASS HIGH-BRIGHTNESS INGAN/ALGAN DOUBLE-HETEROSTRUCTURE BLUE-LIGHT-EMITTING DIODES [J].

NAKAMURA, S ;

MUKAI, T ;

SENOH, M .

APPLIED PHYSICS LETTERS, 1994, 64 (13) :1687-1689

[6] InGaN multi-quantum-well structure laser diodes grown on MgAl2O4 substrates [J].

Nakamura, S ;

Senoh, M ;

Nagahama, S ;

Iwasa, N ;

Yamada, T ;

Matsushita, T ;

Kiyoku, H ;

Sugimoto, Y .

APPLIED PHYSICS LETTERS, 1996, 68 (15) :2105-2107

[7] HIGH-BRIGHTNESS INGAN BLUE, GREEN AND YELLOW LIGHT-EMITTING-DIODES WITH QUANTUM-WELL STRUCTURES [J].

NAKAMURA, S ;

SENOH, N ;

IWASA, N ;

NAGAHAMA, SI .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1995, 34 (7A) :L797-L799

[8] SUPERBRIGHT GREEN INGAN SINGLE-QUANTUM-WELL-STRUCTURE LIGHT-EMITTING-DIODES [J].

NAKAMURA, S ;

SENOH, M ;

IWASA, N ;

NAGAHAMA, S ;

YAMADA, T ;

MUKAI, T .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1995, 34 (10B) :L1332-L1335

[9] GaN epitaxial growth on neodium gallate substrates [J].

Okazaki, H ;

Arakawa, A ;

Asahi, T ;

Oda, O ;

Aiki, K .

SOLID-STATE ELECTRONICS, 1997, 41 (02) :263-266

[10]

OSINSKI M, 1996, P INT S BLUE LAS LIG, P217

← 1 2 →