Mechanism of enhanced luminescence in InxAlyGa1-x-yN quaternary alloys

被引：53

作者：

Chen, CH ^{[1
]}

Huang, LY

Chen, YF

Jiang, HX

Lin, JY

机构：

[1] Natl Taiwan Univ, Dept Phys, Taipei, Taiwan

[2] Kansas State Univ, Dept Phys, Manhattan, KS 66506 USA

来源：

APPLIED PHYSICS LETTERS | 2002年 / 80卷 / 08期

关键词：

D O I：

10.1063/1.1455147

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report a firm evidence of enhanced luminescence from InGaN-like clusters in In(x)Al(y)Gal(1-x-y)N quaternary alloys. Photoluminescence (PL) and Raman scattering measurements have been employed to study the optical properties of these alloys. The excellent correlation between the phonon replica structures accompanying luminescence line and the observed InGaN-related phonon modes in Raman spectra provide a powerful evidence showing that the existence of InGaN-like clusters is responsible for the enhanced luminescence in InxAlyGa1-x-yN quaternary alloys. In addition, the dependence of the PL emission energy on temperature in the low-temperature regime and on excitation power density can also be explained consistently with recombination mechanisms involving the localized states attributed to InGaN-like cluster size fluctuations. (C) 2002 American Institute of Physics.

引用

页码：1397 / 1399

页数：3

共 21 条

[1] Effects of tensile and compressive strain on the luminescence properties of AlInGaN/InGaN quantum well structures [J].