Initial growth layers and critical thickness of InAs heteroepitaxy on GaAs substrates

被引:34
作者
Sasaki, A
机构
[1] Dept. of Electron. Sci. and Eng., Kyoto University
关键词
D O I
10.1016/0022-0248(95)00472-6
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
The initial growth layers and the critical thickness of InAs on GaAs are investigated in order to establish which growth modes and heteroepitaxial processes can be revealed. The InAs layers are grown on (001)-oriented GaAs substrates at 480 degrees C by molecular beam epitaxy, They grow two-dimensionally at first and then begin to develop three-dimensional growth at a 1.8 mono-molecular layer (ML). The experiments suggest that the first flat layer remains at and just after three-dimensional formation and thus the growth mode is of Stranski-Krastanov. The experimental results show that the critical thickness is 3 ML beyond which misfit dislocations are generated in the layers and/or at the heterointerface. They are observed and measured by reflection high energy electron diffraction, atomic force microscopy, electroluminescence, photocurrent spectroscopy, transmission electron microscopy, and photoluminescence. The critical thickness is theoretically obtained by taking account of the strain energy calculated by the valence-force field method. The experimental thickness agrees well with the theoretical value.
引用
收藏
页码:27 / 35
页数:9
相关论文
共 32 条
  • [1] NANOSCALE INP ISLANDS FOR QUANTUM BOX STRUCTURES BY HYDRIDE VAPOR-PHASE EPITAXY
    AHOPELTO, J
    YAMAGUCHI, AA
    NISHI, K
    USUI, A
    SAKAKI, H
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1993, 32 (1A-B): : L32 - L35
  • [2] GEOMETRY AND INTERFACE STRUCTURE OF ISLAND NUCLEI FOR GASB BUFFER LAYERS GROWN ON (001) GAAS BY METALORGANIC VAPOR-PHASE EPITAXY
    AINDOW, M
    CHENG, TT
    MASON, NJ
    SEONG, TY
    WALKER, PJ
    [J]. JOURNAL OF CRYSTAL GROWTH, 1993, 133 (1-2) : 168 - 174
  • [3] BREAKDOWN OF CONTINUUM ELASTICITY THEORY IN THE LIMIT OF MONATOMIC FILMS
    BRANDT, O
    PLOOG, K
    BIERWOLF, R
    HOHENSTEIN, M
    [J]. PHYSICAL REVIEW LETTERS, 1992, 68 (09) : 1339 - 1342
  • [4] STRUCTURAL AND OPTICAL-PROPERTIES OF (100) INAS SINGLE-MONOLAYER QUANTUM-WELLS IN BULKLIKE GAAS GROWN BY MOLECULAR-BEAM EPITAXY
    BRANDT, O
    TAPFER, L
    CINGOLANI, R
    PLOOG, K
    HOHENSTEIN, M
    PHILLIPP, F
    [J]. PHYSICAL REVIEW B, 1990, 41 (18): : 12599 - 12606
  • [5] GROWTH-PROCESSES AND RELAXATION MECHANISMS IN THE MOLECULAR-BEAM EPITAXY OF INAS/GAAS HETEROSTRUCTURES
    BRANDT, O
    TAPFER, L
    PLOOG, K
    HOHENSTEIN, M
    PHILLIPP, F
    [J]. JOURNAL OF CRYSTAL GROWTH, 1991, 111 (1-4) : 383 - 387
  • [6] SYNTHESIS AND STRUCTURAL CONFIGURATION OF HIGHLY STRAINED INAS FILMS IN GAAS
    BRANDT, O
    PLOOG, K
    TAPFER, L
    HOHENSTEIN, M
    PHILLIPP, F
    [J]. JOURNAL OF CRYSTAL GROWTH, 1991, 115 (1-4) : 99 - 105
  • [7] REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION AND OPTICAL MEASUREMENTS ON THE MOLECULAR-BEAM EPITAXIAL-GROWTH OF ONE AND 2 MONOLAYERS OF INAS ON GAAS
    DOSANJH, SS
    DAWSON, P
    FAHY, MR
    JOYCE, BA
    MURRAY, R
    TOYOSHIMA, H
    ZHANG, XM
    STRADLING, RA
    [J]. JOURNAL OF APPLIED PHYSICS, 1992, 71 (03) : 1242 - 1247
  • [8] DISLOCATION-FREE STRANSKI-KRASTANOW GROWTH OF GE ON SI(100)
    EAGLESHAM, DJ
    CERULLO, M
    [J]. PHYSICAL REVIEW LETTERS, 1990, 64 (16) : 1943 - 1946
  • [9] INTERFACE STRUCTURE OF INAS GROWN ON GAAS(001) SURFACES BY MOLECULAR-BEAM EPITAXY
    FAWCETT, PN
    JOYCE, BA
    ZHANG, X
    PASHLEY, DW
    [J]. JOURNAL OF CRYSTAL GROWTH, 1992, 116 (1-2) : 81 - 86
  • [10] RHEED AND X-RAY CHARACTERIZATION OF INGAAS/GAAS GROWN BY MBE
    FUJITA, S
    NAKAOKA, Y
    UEMURA, T
    TABUCHI, M
    NODA, S
    TAKEDA, Y
    SASAKI, A
    [J]. JOURNAL OF CRYSTAL GROWTH, 1989, 95 (1-4) : 224 - 227