Application of Monte Carlo simulation to SEM image contrast of complex structures

被引:42
作者
Ding, ZJ [1 ]
Li, HM
机构
[1] Univ Sci & Technol China, Hefei Natl Lab Phys Sci Microscale, Hefei 230026, Anhui, Peoples R China
[2] Univ Sci & Technol China, Dept Phys, Hefei 230026, Anhui, Peoples R China
关键词
secondary electrons; backscattered electrons; SEM images; Monte Carlo; CSG;
D O I
10.1002/sia.2109
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
A new Monte Carlo technique for the simulation of scanning electron microscopy (SEM) images for an inhomogeneous specimen with a complex geometric structure has been developed. The simulation is based on constructive solid geometry (CSG) modelling, i.e. constructive solid geometry modelling with simple geometric structures, as well as a ray-tracing technique for correction of electron step-length sampling when an electron trajectory crosses the interface of the inhomogeneous structures. This correction is important for the simulation of nano-scale structures whose size is comparable with or even less than the electron-scattering mean free paths. Copyright (C) 2005 John Wiley & Sons, Ltd.
引用
收藏
页码:912 / 918
页数:7
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