学术探索
学术期刊
新闻热点
数据分析
智能评审

LO-phonon and plasmon coupling in neutron-transmutation-doped GaAs

被引：11
作者：
Kuriyama, K
Sakai, K
Okada, M
机构：
[1] HOSEI UNIV,RES CTR BEAM TECHNOL,KOGANEI,TOKYO 184,JAPAN
[2] KYOTO UNIV,INST RES REACTOR,KUMATORI,OSAKA 59004,JAPAN
来源：
PHYSICAL REVIEW B | 1996年 / 53卷 / 03期
关键词：
D O I：
10.1103/PhysRevB.53.987
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Coupling between the longitudinal-optic (LO) phonon mode and the longitudinal plasma mode in neutron-transmutation-doped (NTD) semi-insulating GaAs was studied using Raman-scattering spectroscopy and a Fourier-transform infrared spectrometer. When the electron concentration due to the activation of NTD impurities (Ge-Ga and Se-As) approaches similar to 8X10(16) cm(-3), the LO-phonon-plasmon coupling is observed. This behavior is consistent with the free-electron absorption due to the activation of NTD impurities in samples annealed above 600 degrees C.
引用
收藏
页码：987 / 989
页数：3
相关论文
共 14 条
12