PHOTOINDUCED RECOVERY OF PHOTOQUENCHED HOPPING CONDUCTION IN NEUTRON-IRRADIATED SEMIINSULATING GAAS

被引：7

作者：

KURIYAMA, K ^{[1
]}

YOKOYAMA, K ^{[1
]}

TANIGUCHI, K ^{[1
]}

机构：

[1] HOSEI UNIV,ION BEAM TECHNOL RES CTR,KOBANEI,TOKYO 184,JAPAN

来源：

PHYSICAL REVIEW B | 1992年 / 45卷 / 11期

关键词：

D O I：

10.1103/PhysRevB.45.6251

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The photoinduced recovery that starts from the full quenched state in tunneling-assisted hopping conduction has been observed in neutron-irradiated semi-insulating GaAs preilluminated with laser-diode light of 1410-nm wavelength. This recovery phenomenon supports the interpretation that the EL2-like defects created by thermal annealing at around 250-degrees-C after neutron irradiation are to be identified as the native EL2 defect. According to the photoresponse study using different wavelengths, neutron-induced EL2 defects are likely to have several quenchable components.

引用

页码：6251 / 6254

页数：4

共 19 条

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