QUENCHING PHENOMENON OF HOPPING CONDUCTION IN NEUTRON-TRANSMUTATION-DOPED SEMI-INSULATING GAAS

被引：19

作者：

SATOH, M ^{[1
]}

KURIYAMA, K ^{[1
]}

机构：

[1] HOSEI UNIV,ION BEAM TECHNOL RES CTR,KOGANEI,TOKYO 184,JAPAN

来源：

PHYSICAL REVIEW B | 1989年 / 40卷 / 05期

关键词：

D O I：

10.1103/PhysRevB.40.3473

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：3473 / 3475

页数：3

共 21 条

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