Molecular-beam epitaxy and device applications of III-V semiconductor nanowires

被引：33

作者：

Hasegawa, H

Fujikura, H

Okada, H

机构：

来源：

MRS BULLETIN | 1999年 / 24卷 / 08期

关键词：

D O I：

10.1557/S0883769400052866

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

One of the important building blocks for future quantum ULSIs is the type of wire structures used. Nanowires may be made out of semiconductors, metals, or other materials. The formation, properties, and device applications of two types of III-V semiconductor nanowires grown by MBE-based techniques are investigated. Since these wires are formed as building blocks of quantum devices, some emphasis is placed on the device applications of the wires.

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页码：25 / 30

页数：6

相关论文

共 30 条

[1] Selective molecular beam epitaxy growth of quantum wire-dot coupled structures with novel high index facets for InGaAs single electron transistor arrays [J].

Fujikura, H ;

Muranaka, T ;

Hasegawa, H .

MICROELECTRONICS JOURNAL, 1999, 30 (4-5) :397-401

[2] Fabrication of InP-based InGaAs ridge quantum wires utilizing selective molecular beam epitaxial growth on (311)A facets [J].

Fujikura, H ;

Hasegawa, H .

JOURNAL OF ELECTRONIC MATERIALS, 1996, 25 (04) :619-625

[3] Controlled formation of narrow and uniform InP-based In0.53Ga0.47As ridge quantum wire arrays by selective molecular beam epitaxy [J].

Fujikura, H ;

Hanada, Y ;

Kihara, M ;

Hasegawa, H .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1998, 37 (3B) :1532-1539

[4]

FUKUI T, 1990, APPL PHYS LETT, V57, P1029

[5] EFFECTS OF LONG-RANGE COULOMB INTERACTION ON RESISTIVITY OF A QUANTUM WIRE [J].

FUKUYAMA, H ;

KOHNO, H ;

SHIRASAKI, R .

JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1993, 62 (04) :1109-1113

[6] Direct formation of ingaas coupled quantum wire-dot structures by selective molecular beam epitaxy on inp patterned substrates [J].

Hanada, Y ;

Ono, N ;

Fujikura, H ;

Hasegawa, H .

SOLID-STATE ELECTRONICS, 1998, 42 (7-8) :1413-1417

[7] FABRICATION AND CHARACTERIZATION OF QUANTUM-WIRE TRANSISTORS WITH SCHOTTKY INPLANE GATES FORMED BY AN IN-SITU ELECTROCHEMICAL PROCESS [J].

HASEGAWA, H ;

HASHIZUME, T ;

OKADA, H ;

JINUSHI, K .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1995, 13 (04) :1744-1750

[8] Quantum transport in a Schottky in-plane-gate controlled GaAs/AlGaAs quantum well wires [J].

Hashizume, T ;

Okada, H ;

Hasegawa, H .

PHYSICA B, 1996, 227 (1-4) :42-45

[9] OBSERVATION OF CONDUCTANCE QUANTIZATION IN A NOVEL SCHOTTKY INPLANE GATE WIRE TRANSISTOR FABRICATED BY LOW-DAMAGE IN-SITU ELECTROCHEMICAL PROCESS [J].

HASHIZUME, T ;

OKADA, H ;

JINUSHI, K ;

HASEGAWA, H .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1995, 34 (5B) :L635-L638

[10] Novel GaAs-based single-electron transistors with Schottky in-plane gates operating up to 20 K [J].

Jinushi, K ;

Okada, H ;

Hashizume, T ;

Hasegawa, H .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1996, 35 (2B) :1132-1139