Monte Carlo simulation of In surface segregation during the growth of InxGa1-xAs on GaAs(001)

被引：50

作者：

Grandjean, N

Massies, J

Leroux, M

机构：

[1] Centre de Recherche sur l’Hétéro-Epitaxie et ses Applications, Centre National de la Recherche Scientifique, Sophia Antipolis 06560 Valbonne, Rue B. Grégory

来源：

PHYSICAL REVIEW B | 1996年 / 53卷 / 03期

关键词：

D O I：

10.1103/PhysRevB.53.998

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The In surface segregation during the growth of InxGa1-xAs on GaAs(001) has been investigated through a Monte Carlo simulation taking into account the difference between the binding energies of InAs and GaAs and the effect of the epitaxial strain. Photoluminescence energies of quantum-well structures calculated from simulated composition profiles obtained at different temperatures are found to be in good agreement with the experimental ones. It is shown that Monte Carlo simulation is a very powerful way to predict the variation of the In composition profile as a function of growth parameters. It can, moreover, be easily extended to different materials, strain conditions, and surface morphologies.

引用

页码：998 / 1001

页数：4

共 28 条

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