Hot-carrier phenomena in high temperature processed undoped-hydrogenated n-channel polysilicon thin film transistors (TFTs)

被引:18
作者
Farmakis, FV
Dimitriadis, CA
Brini, J
Kamarinos, G
Gueorguiev, VK
Ivanov, TE
机构
[1] ENSERG, LPCS, F-38016 Grenoble 1, France
[2] Bulgarian Acad Sci, Inst Solid State Phys, BU-1784 Sofia, Bulgaria
关键词
D O I
10.1016/S0038-1101(99)00065-9
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A study on hot-carrier phenomena in high temperature processed undoped and hydrogenated n-channel polysilicon thin film transistors (TFTs) is presented. First, stress conditions are determined by photon emission measurements during impact ionization condition. Next four stress regimes are performed. We distinguish two modes of stress conditions according to drain voltage during stressing: High drain voltage stress (HDVS) and low drain voltage stress (LDVS). Each of these modes gives different results when applied to our TFTs. During HDVS condition, two regimes are observed. First, hot-hole injection into the oxide occurs synchronically with interface-state generation. At a second stage, this mechanism saturates and electron injection through the polySi-SiO2 barrier takes place with less interface states generated. In contrast, during LDVS conditions no saturation of interface-state generation is observed and two regimes of transconductance degradation appear. The distribution in the gap of the stress-induced interface states is calculated by a known method. Finally, on- and off-state current stress was studied. Off-stressing affects mainly the gate oxide and is not accompanied by measurable impact ionization phenomena and thus no considerable interface-state generation. (C) 1999 Elsevier Science Ltd. All rights reserved.
引用
收藏
页码:1259 / 1266
页数:8
相关论文
共 23 条
[1]  
ARNOLD D, 1994, PHYS REV B, V10, P278
[2]   HOT-ELECTRON DEGRADATION OF N-CHANNEL POLYSILICON MOSFETS [J].
BANERJEE, S ;
SUNDARESAN, R ;
SHICHIJO, H ;
MALHI, S .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1988, 35 (02) :152-157
[3]  
CHAN VH, 1995, IEEE T ELECTRON DEV, V42, P957
[4]   INTERFACE STATES INDUCED BY THE PRESENCE OF TRAPPED HOLES NEAR THE SILICON-SILICON DIOXIDE INTERFACE [J].
DIMARIA, DJ ;
BUCHANAN, DA ;
STATHIS, JH ;
STAHLBUSH, RE .
JOURNAL OF APPLIED PHYSICS, 1995, 77 (05) :2032-2040
[5]   LEAKAGE CURRENT OF UNDOPED LPCVD POLYCRYSTALLINE SILICON THIN-FILM TRANSISTORS [J].
DIMITRIADIS, CA ;
COXON, PA ;
ECONOMOU, NA .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1995, 42 (05) :950-956
[6]   HOT-CARRIER EFFECTS IN N-CHANNEL POLYCRYSTALLINE SILICON THIN-FILM TRANSISTORS - A CORRELATION BETWEEN OFF-CURRENT AND TRANSCONDUCTANCE VARIATIONS [J].
FORTUNATO, G ;
PECORA, A ;
TALLARIDA, G ;
MARIUCCI, L ;
REITA, C ;
MIGLIORATO, P .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1994, 41 (03) :340-346
[7]   A SIMPLE SCHEME FOR EVALUATING FIELD-EFFECT DATA [J].
GRUNEWALD, M ;
THOMAS, P ;
WURTZ, D .
PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1980, 100 (02) :K139-K143
[8]   TWO-DIMENSIONAL MODELING OF LOCALLY DAMAGED SHORT-CHANNEL MOSFETS OPERATING IN THE LINEAR REGION [J].
HADDARA, H ;
CRISTOLOVEANU, S .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1987, 34 (02) :378-385
[9]   INTERFACE TRAP GENERATION IN SILICON DIOXIDE WHEN ELECTRONS ARE CAPTURED BY TRAPPED HOLES [J].
LAI, SK .
JOURNAL OF APPLIED PHYSICS, 1983, 54 (05) :2540-2546
[10]  
MADAN SK, 1986, IEEE T ELECTRON DEV, V33, P1518