Large excitonic effects in monolayers of molybdenum and tungsten dichalcogenides

被引:1339
作者
Ramasubramaniam, Ashwin [1 ]
机构
[1] Univ Massachusetts, Dept Mech & Ind Engn, Amherst, MA 01003 USA
关键词
GREENS-FUNCTION; MOS2; SEMICONDUCTORS; PHOTOLUMINESCENCE; EXCITATIONS;
D O I
10.1103/PhysRevB.86.115409
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Quasiparticle band structures and optical properties of MoS2, MoSe2, MoTe2, WS2, and WSe2 monolayers are studied using the GW approximation in conjunction with the Bethe-Salpeter equation (BSE). The inclusion of two-particle excitations in the BSE approach reveals the presence of two strongly bound excitons (A and B) below the quasiparticle absorption onset arising from vertical transitions between a spin-orbit-split valence band and the conduction band at the K point of the Brillouin zone. The transition energies for monolayer MoS2, in particular, are shown to be in excellent agreement with available absorption and photoluminescence measurements. Excitation energies for the remaining monolayers are predicted to lie in the range of 1-2 eV. Systematic trends are identified for quasiparticle band gaps, transition energies, and exciton binding energies within as well as across the Mo and W families of dichalcogenides. Overall, the results suggest that quantum confinement of carriers within monolayers can be exploited in conjunction with chemical composition to tune the optoelectronic properties of layered transition-metal dichalcogenides at the nanoscale.
引用
收藏
页数:6
相关论文
共 43 条
[31]   Electronic excitations: density-functional versus many-body Green's-function approaches [J].
Onida, G ;
Reining, L ;
Rubio, A .
REVIEWS OF MODERN PHYSICS, 2002, 74 (02) :601-659
[32]  
Perdew JP, 1997, PHYS REV LETT, V78, P1396, DOI 10.1103/PhysRevLett.77.3865
[33]   Single-layer MoS2 transistors [J].
Radisavljevic, B. ;
Radenovic, A. ;
Brivio, J. ;
Giacometti, V. ;
Kis, A. .
NATURE NANOTECHNOLOGY, 2011, 6 (03) :147-150
[34]   Integrated Circuits and Logic Operations Based on Single-Layer MoS2 [J].
Radisavljevic, Branimir ;
Whitwick, Michael Brian ;
Kis, Andras .
ACS NANO, 2011, 5 (12) :9934-9938
[35]   Tunable band gaps in bilayer transition-metal dichalcogenides [J].
Ramasubramaniam, Ashwin ;
Naveh, Doron ;
Towe, Elias .
PHYSICAL REVIEW B, 2011, 84 (20)
[36]   Electron-hole excitations in semiconductors and insulators [J].
Rohlfing, M ;
Louie, SG .
PHYSICAL REVIEW LETTERS, 1998, 81 (11) :2312-2315
[37]   INTERBAND OPTICAL TRANSITIONS IN EXTREMELY ANISOTROPIC SEMICONDUCTORS .I. BOUND AND UNBOUND EXCITON ABSORPTION [J].
SHINADA, M ;
SUGANO, S .
JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1966, 21 (10) :1936-&
[38]   Implementation and performance of the frequency-dependent GW method within the PAW framework [J].
Shishkin, M. ;
Kresse, G. .
PHYSICAL REVIEW B, 2006, 74 (03)
[39]   Emerging Photoluminescence in Monolayer MoS2 [J].
Splendiani, Andrea ;
Sun, Liang ;
Zhang, Yuanbo ;
Li, Tianshu ;
Kim, Jonghwan ;
Chim, Chi-Yung ;
Galli, Giulia ;
Wang, Feng .
NANO LETTERS, 2010, 10 (04) :1271-1275
[40]   TRANSITION METAL DICHALCOGENIDES DISCUSSION AND INTERPRETATION OF OBSERVED OPTICAL, ELECTRICAL AND STRUCTURAL PROPERTIES [J].
WILSON, JA ;
YOFFE, AD .
ADVANCES IN PHYSICS, 1969, 18 (73) :193-+