The effect of rapid thermal annealing on properties of plasma enhanced CVD silicon oxide films

被引:20
作者
Domínguez, C [1 ]
Rodríguez, JA
Muñoz, FJ
Zine, N
机构
[1] Univ Autonoma Barcelona, Ctr Nacl Microelect, E-08193 Barcelona, Spain
[2] Univ Havana, Fac Phys, Havana 10400, Cuba
关键词
annealing; Fourier transform infrared spectroscopy; silicon oxide; stress;
D O I
10.1016/S0040-6090(98)01762-3
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The effect of rapid thermal annealing in oxygen and nitrogen ambients on the properties of silicon oxide films of different stoichiometry was studied. The films were deposited on silicon wafers by plasma enhanced chemical vapour deposition (PECVD) from silane (SiH4) and nitrous oxide (N2O) at different N2O/SiH4 flow ratios. It was found that rapid thermal annealing significantly affects the thickness of deposited oxides and the total mechanical stress in the film. The density and the refractive index of the film hardly changed. The hydrogen content of the films has been discussed on the basis of Fourier transform infrared transmission spectroscopy, and is related to the changes in the him properties. (C) 1999 Elsevier Science S.A. All rights reserved.
引用
收藏
页码:202 / 206
页数:5
相关论文
共 22 条
[1]   CHARACTERIZATION OF PLASMA-DEPOSITED SILICON DIOXIDE [J].
ADAMS, AC ;
ALEXANDER, FB ;
CAPIO, CD ;
SMITH, TE .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1981, 128 (07) :1545-1551
[2]   STRESS IN CHEMICAL-VAPOR-DEPOSITED SIO2 AND PLASMA-SINX FILMS ON GAAS AND SI [J].
BLAAUW, C .
JOURNAL OF APPLIED PHYSICS, 1983, 54 (09) :5064-5068
[3]   Si-H bonding configuration in SiOx:N,H films deposited by chemical vapor deposition [J].
Borghesi, A ;
Sassella, A ;
Pivac, B ;
Zanotti, L .
SOLID STATE COMMUNICATIONS, 1996, 100 (09) :657-661
[4]   Optical properties of non-stoichiometric SiO2 as a function of excess silicon content and thermal treatments [J].
Calleja, W ;
Falcony, C ;
Torres, A ;
Aceves, M ;
Osorio, R .
THIN SOLID FILMS, 1995, 270 (1-2) :114-117
[5]   STRUCTURAL-ANALYSIS BY INFRARED AND X-RAY PHOTOELECTRON-SPECTROSCOPY OF AMORPHOUS-SILICON PRODUCED BY PLASMA-DEPOSITION [J].
DELLASALA, D ;
FORTUNATO, G .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1990, 137 (08) :2550-2556
[6]  
Fair R B, 1993, RAPID THERMAL PROCES
[7]   Characterization of excess Si in nonstoichiometric SiO2 films by optical and surface analysis techniques [J].
Falcony, C ;
Calleja, W ;
Aceves, M ;
Siqueiros, JM ;
Machorro, R ;
CotaAraiza, L ;
Soto, G ;
Farias, MH .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1997, 144 (01) :379-383
[8]   STUDY OF THE GAS-PHASE PARAMETERS AFFECTING THE SILICON-OXIDE FILM DEPOSITION INDUCED BY AN ARF LASER [J].
GONZALEZ, P ;
FERNANDEZ, D ;
POU, J ;
GARCIA, E ;
SERRA, J ;
LEON, B ;
PEREZAMOR, M ;
SZORENYI, T .
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1993, 57 (02) :181-185
[9]  
HANSEN F, 1987, J APPL PHYS, V62, P4732
[10]   RESULTS OF MONOLITHIC INTEGRATION OF OPTICAL WAVE-GUIDES, PHOTODIODES AND CMOS CIRCUITS ON SILICON [J].
HILLERINGMANN, U ;
GOSER, K .
MICROELECTRONIC ENGINEERING, 1992, 19 (1-4) :211-214