STUDY OF THE GAS-PHASE PARAMETERS AFFECTING THE SILICON-OXIDE FILM DEPOSITION INDUCED BY AN ARF LASER

被引：12

作者：

GONZALEZ, P ^{[1
]}

FERNANDEZ, D ^{[1
]}

POU, J ^{[1
]}

GARCIA, E ^{[1
]}

SERRA, J ^{[1
]}

LEON, B ^{[1
]}

PEREZAMOR, M ^{[1
]}

SZORENYI, T ^{[1
]}

机构：

[1] HUNGARIAN ACAD SCI,LASER PHYS RES GRP,H-6720 SZEGED,HUNGARY

来源：

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 1993年 / 57卷 / 02期

关键词：

D O I：

10.1007/BF00331442

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A study of the gas-phase parameters involved in ArF laser induced chemical vapour deposition of silicon-oxide thin films is presented. A complete set of experiments has been performed showing the influence of the concentration of the precursor gases, N2O and SiH4, and their influence on total and partial pressures on film growth and properties. In this paper we demonstrate the ability of this LCVD method to deposit silicon oxide films of different compositions and densities by appropriate control of gas composition and total pressure. Moreover, a material specific calibration plot comprising data obtained using different preparation techniques is presented, allowing determination of the stoichiometry of SiO(x) films by using FTIR spectroscopy independently of the deposition method. For the range of processing conditions examined, the experimental results suggest that chemical processes governing deposition take place mainly in the gas phase.

引用

页码：181 / 185

页数：5

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