THE DIRECT PHOTOCHEMICAL VAPOR-DEPOSITION OF SIO2 FROM SI2H6 AND N2O3 MIXTURES

被引：11

作者：

BHATNAGAR, YK

MILNE, WI

机构：

来源：

THIN SOLID FILMS | 1989年 / 168卷 / 02期

关键词：

D O I：

10.1016/0040-6090(89)90018-7

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：345 / 352

页数：8

共 14 条

[1] VACUUM ULTRAVIOLET-ABSORPTION CROSS-SECTIONS OF SIH4, GEH4, SI2H6, AND SI3H8
ITOH, U
TOYOSHIMA, Y
ONUKI, H
WASHIDA, N
IBUKI, T
[J]. JOURNAL OF CHEMICAL PHYSICS, 1986, 85 (09) : 4867 - 4872
[2] MAGNESIUM FLUORIDE WINDOWED DEUTERIUM LAMPS AS RADIANCE TRANSFER STANDARDS BETWEEN 115-NM AND 370-NM
KEY, PJ
PRESTON, RC
[J]. JOURNAL OF PHYSICS E-SCIENTIFIC INSTRUMENTS, 1980, 13 (08): : 866 - 870
[3] SILICON DIOXIDE DEPOSITION AT 100-DEGREES-C USING VACUUM ULTRAVIOLET-LIGHT
MARKS, J
ROBERTSON, RE
[J]. APPLIED PHYSICS LETTERS, 1988, 52 (10) : 810 - 812
[4] DIRECT PHOTOCHEMICAL DEPOSITION OF SIO2 FROM THE SI2H6+O2 SYSTEM
MISHIMA, Y
HIROSE, M
OSAKA, Y
ASHIDA, Y
[J]. JOURNAL OF APPLIED PHYSICS, 1984, 55 (04) : 1234 - 1236
[5] NICOLLIAN EH, 1982, MOS PHYSICS TECHNOLO
[6] OKABE H, 1978, PHOTOCHEMISTRY SMALL, P171
[7] SIO2 THIN-FILM PREPARED FROM SI3H8 AND O-2 BY PHOTO-CVD USING DOUBLE EXCITATION
OKUYAMA, M
FUJIKI, N
INOUE, K
HAMAKAWA, Y
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1987, 26 (06): : L908 - L910
[8] PHOTOINDUCED CHEMICAL VAPOR-DEPOSITION OF SIO2 FILM USING DIRECT EXCITATION PROCESS BY DEUTERIUM LAMP
OKUYAMA, M
TOYODA, Y
HAMAKAWA, Y
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1984, 23 (02): : L97 - L99
[9] INFRARED SPECTROSCOPIC STUDY OF SIOX FILMS PRODUCED BY PLASMA ENHANCED CHEMICAL VAPOR-DEPOSITION
PAI, PG
CHAO, SS
TAKAGI, Y
LUCOVSKY, G
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1986, 4 (03): : 689 - 694
[10] THE 147-NM PHOTOLYSIS OF DISILANE
PERKINS, GGA
LAMPE, FW
[J]. JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 1980, 102 (11) : 3764 - 3769

← 1 2 →