Epitaxial Pb(Zr0.53Ti0.47)O-3/LaNiO3 heterostructures on single crystal substrates

被引:34
作者
Yu, T
Chen, YF
Liu, ZG
Xiong, SB
Sun, L
Chen, XY
Shi, LJ
Ming, NB
机构
[1] CTR ADV STUDIES SCI & TECHNOL MICROSTRUCT,NANJING 210093,PEOPLES R CHINA
[2] NANJING UNIV SCI & TECHNOL,DEPT MAT SCI & ENGN,NANJING 210014,PEOPLES R CHINA
[3] CCAST,WORLD LAB,BEIJING 100080,PEOPLES R CHINA
关键词
D O I
10.1063/1.116890
中图分类号
O59 [应用物理学];
学科分类号
摘要
Epitaxial near-stoichiometric ferroelectric Pb(Zr0.53Ti0.47)O-3 thin films were fabricated on epitaxial metallic LaNiO3 electrodes deposited on (001) SrTiO3 and (001) LaAlO3 single crystal substrates by pulsed laser ablation. The P-E hysteresis loop of PZT in the trilayer of Ag/PZT/LNO/STO was measured using the Sawyer-Tower circuit. The remnant polarization P-r and coercive field E(c)at room temperature were 30 mu C/cm(2) and 69.3 kV/cm (peak-to-peak voltage=30 V, 50 Hz), respectively. (C) 1996 American Institute of Physics.
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页码:2092 / 2094
页数:3
相关论文
共 18 条
[1]   SINGLE-CRYSTALLINE, SINGLE-DOMAIN EPITAXY OF PBTIO3 THIN-FILMS BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION [J].
CHEN, YF ;
SUN, L ;
YU, T ;
CHEN, JX ;
MING, NB ;
DING, DS ;
WANG, LW .
APPLIED PHYSICS LETTERS, 1995, 67 (23) :3503-3505
[2]  
CHEUNG JT, 1992, 4TH P INT S INT FERR, P518
[3]   FABRICATION AND PROPERTIES OF EPITAXIAL FERROELECTRIC HETEROSTRUCTURES WITH (SRRUO3) ISOTROPIC METALLIC OXIDE ELECTRODES [J].
EOM, CB ;
VANDOVER, RB ;
PHILLIPS, JM ;
WERDER, DJ ;
MARSHALL, JH ;
CHEN, CH ;
CAVA, RJ ;
FLEMING, RM ;
FORK, DK .
APPLIED PHYSICS LETTERS, 1993, 63 (18) :2570-2572
[4]   EPITAXIAL YTTRIA-STABILIZED ZIRCONIA ON HYDROGEN-TERMINATED SI BY PULSED LASER DEPOSITION [J].
FORK, DK ;
FENNER, DB ;
CONNELL, GAN ;
PHILLIPS, JM ;
GEBALLE, TH .
APPLIED PHYSICS LETTERS, 1990, 57 (11) :1137-1139
[5]   COMPOSITION-CONTROLLED METAL-INSULATOR TRANSITIONS AND MINIMUM METALLIC CONDUCTIVITY IN THE OXIDE SYSTEMS LANI1-XCRXO3, LANI1-XMNXO3, LANI1-XFEXO3, OR LANI-XCO [J].
GANGULY, P ;
VASANTHACHARYA, NY ;
RAO, CNR ;
EDWARDS, PP .
JOURNAL OF SOLID STATE CHEMISTRY, 1984, 54 (03) :400-406
[6]   PREPARATION OF PB(ZR,TI)O-3 THIN-FILMS ON IR AND IRO2 ELECTRODES [J].
NAKAMURA, T ;
NAKAO, Y ;
KAMISAWA, A ;
TAKASU, H .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1994, 33 (9B) :5207-5210
[7]   GROWTH AND FERROELECTRIC PROPERTIES OF BI2VO5.5 THIN-FILMS WITH METALLIC LANIO3 ELECTRODES [J].
PRASAD, KVR ;
VARMA, KBR ;
RAJU, AR ;
SATYALAKSHMI, KM ;
MALLYA, RM ;
HEGDE, MS .
APPLIED PHYSICS LETTERS, 1993, 63 (14) :1898-1900
[8]   LOW-TEMPERATURE ELECTRONIC-PROPERTIES OF A NORMAL CONDUCTING PEROVSKITE OXIDE (LANIO3) [J].
RAJEEV, KP ;
SHIVASHANKAR, GV ;
RAYCHAUDHURI, AK .
SOLID STATE COMMUNICATIONS, 1991, 79 (07) :591-595
[9]   FERROELECTRIC PBZR0.2TI0.8O3 THIN-FILMS ON EPITAXIAL Y-BA-CU-O [J].
RAMESH, R ;
INAM, A ;
CHAN, WK ;
TILLEROT, F ;
WILKENS, B ;
CHANG, CC ;
SANDS, T ;
TARASCON, JM ;
KERAMIDAS, VG .
APPLIED PHYSICS LETTERS, 1991, 59 (27) :3542-3544
[10]   EPITAXIAL CUPRATE SUPERCONDUCTOR FERROELECTRIC HETEROSTRUCTURES [J].
RAMESH, R ;
INAM, A ;
CHAN, WK ;
WILKENS, B ;
MYERS, K ;
REMSCHNIG, K ;
HART, DL ;
TARASCON, JM .
SCIENCE, 1991, 252 (5008) :944-946