Morphological properties of porous-Si layers for n+-emitter applications

被引：1

作者：

Bender, H ^{[1
]}

Jin, S ^{[1
]}

Poortmans, J ^{[1
]}

Stalmans, L ^{[1
]}

机构：

[1] IMEC, B-3001 Louvain, Belgium

来源：

APPLIED SURFACE SCIENCE | 1999年 / 147卷 / 1-4期

关键词：

porous silicon; n(+) emitter; spectroscopic ellipsometry; transmission electron microscopy;

D O I：

10.1016/S0169-4332(99)00112-9

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Porous silicon layers prepared on n(+) emitters are investigated by a combination of spectroscopic ellipsometry, transmission electron microscopy and sheet resistance measurements. The porous silicon is formed by an anodic surface treatment of uniformly doped emitters prepared by chemical vapour deposition and of diffused emitters. The results show a good correspondence between the thicknesses obtained with the different techniques. The porosity of the layers increases for increasing doping level and saturates at a doping above similar to 5x10(19)/cm(3). The formation rate shows an inverse doping dependence. The top surface layer of the porous silicon is in all cases more dense than the bulk, which is related to an initially faster formation rate. (C) 1999 Elsevier Science B.V. All rights reserved.

引用

页码：187 / 200

页数：14

共 31 条

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