X-ray diffraction investigation of porous silicon superlattices

被引:26
作者
Buttard, D [1 ]
Bellet, D [1 ]
Baumbach, T [1 ]
机构
[1] INST MAX VON LAUE PAUL LANGEVIN,F-38042 GRENOBLE,FRANCE
关键词
X-ray diffraction; superlattices; silicon; structural properties;
D O I
10.1016/0040-6090(95)08048-1
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
High-resolution X-ray diffraction has been used for the structural characterization of thin single porous silicon (PS) layers and superlattices. Thin PS layers, in the range of 100-1000 nm, exhibit several thickness interfringes, giving evidence for the lateral homogeneity of the layer thickness. For PS superlattices, several satellite reflections are visible in the diffraction pattern. The analysis of these experimental results using simulations allows us to deduce structural information of this new kind of silicon heterostructure.
引用
收藏
页码:69 / 72
页数:4
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