POROUS SILICON MICROSTRUCTURE AS STUDIED BY TRANSMISSION ELECTRON-MICROSCOPY

被引：47

作者：

CHUANG, SF ^{[1
]}

COLLINS, SD ^{[1
]}

SMITH, RL ^{[1
]}

机构：

[1] UNIV CALIF DAVIS,DEPT ELECT ENGN & COMP SCI,DAVIS,CA 95616

来源：

APPLIED PHYSICS LETTERS | 1989年 / 55卷 / 15期

关键词：

D O I：

10.1063/1.102239

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1540 / 1542

页数：3

共 14 条

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[4]

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[9] A THEORETICAL-MODEL OF THE FORMATION MORPHOLOGIES OF POROUS SILICON [J].

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