The analysis of bending stress and mechanical property of ultralarge diameter silicon wafers at high temperatures

In this paper, we investigate the bending stress during thermal annealing of 300 mm diameter wafers on various support structures. We calculate the bending stress generated in the wafers using linear elastic theory and investigate the relationship between the stress and the mechanical strength of silicon crystals. We discuss the temperature range and support structure which can avoid crystallographic slippage in these ultra-large diameter wafers.